Work

Sub-Bandgap External Quantum Efficiency in Ti Implanted Si Heterojunction with Intrinsic Thin Layer Cells

Year: 2013

Type: article

Abstract: In this work we present the manufacturing processes and results obtained from the characterization of heterojunction with intrinsic thin layer solar cells that include a heavily Ti ion implanted Si absorbing layer. The cells exhibit external circuit photocurrent at photon energies well below the Si bandgap. We discuss the origin of this below-bandgap photocurrent and the modifications in the hydrogenated amorphous intrinsic Si layer thickness to increase the open-circuit voltage.

Source: Japanese Journal of Applied Physics

DOI: 10.7567/jjap.52.122302

Authors: Santiago Silvestre, Alfredo Boronat, Mónica Colina, Luis Castañer, Javier Olea, David Pastor, Alvaro del Prado, Ignacio Mártil, Germán González-Díaz, Antonio Luque, Elisa Antolín, Estela Hernández, Iñigo Ramiro, Irene Artacho, Esther López, Antonio Martí

Institutions: Universitat Politècnica de Catalunya, Universidad Complutense de Madrid, Universidad Politécnica de Madrid, Consejo Superior de Investigaciones Científicas, Centro Nacional de Microelectrónica

Language: English

Topic: Silicon and Solar Cell Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: green

OpenAlex ID: W2019935971

FWCI: 1.673

Cites: 26

Cited by: 21

Related to: 10