Work

High-speed growth of Si single bulk crystals by expanding low-temperature region in Si melt using noncontact crucible method

Year: 2014

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/j.jcrysgro.2014.07.024

Authors: Kazuo Nakajima, Kohei Morishita, Ryota Murai

Institution: Kyoto University

Language: English

Topic: Solidification and crystal growth phenomena

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: bronze

Funders: Massachusetts Institute of Technology, Ministry of Education, Culture, Sports, Science and Technology, Japan Science and Technology Agency

OpenAlex ID: W2020106264

FWCI: 2.021

Cites: 16

Cited by: 25

Related to: 10