Work

Deep level defects in electron-irradiated 4H SiC epitaxial layers

Year: 1997

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.364397

Authors: C. Hemmingsson, N. T. Son, O. Kordina, J. P. Bergman, E. Janzén, J. L. Lindström, S. Savage, N. Nordell

Institution: Linköping University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Science Council

OpenAlex ID: W2020164307

FWCI: 3.324

Cites: 13

Cited by: 322

Related to: 10