Work

Chemical contribution of oxygen to silicon carbide plasma etching kinetics in a distributed electron cyclotron resonance (DECR) reactor

Year: 1999

Type: article

Source: Journal of Electronic Materials

DOI: 10.1007/s11664-999-0017-y

Authors: Frédéric Lanois, Dominique Planson, Marie-Laure Locatelli, Patrick Lassagne, Claude Jaussaud, Jean-Pierre Chante

Institutions: Institut National des Sciences Appliquées de Lyon, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, CEA Grenoble

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2020228598

FWCI: 3.848

Cites: 17

Cited by: 26

Related to: 10