Work

Performance characteristics of deep violet InGaN DQW laser diodes with InGaN/GaN superlattice waveguide layers

Year: 2013

Type: article

Source: Optik

DOI: 10.1016/j.ijleo.2013.06.059

Authors: Gh. Alahyarizadeh, Z. Hassan, S.M. Thahab, F.K. Yam, A.J. Ghazai

Institutions: Universiti Sains Malaysia, University of Kufa, Thi Qar University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Universiti Sains Malaysia

OpenAlex ID: W2020250072

FWCI: 0.624

Cites: 13

Cited by: 14

Related to: 10