Work

Improvement in gate breakdown voltage for SOS devices

Year: 1981

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/t-ed.1981.20321

Authors: K. Shuto, K. Kato, M. Hasegawa

Institution: NTT (Japan)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W2020284641

FWCI:

Cites: 3

Cited by: 1

Related to: 10