Work

Transformation of luminescence centers in (SiC)0.95(AlN)0.05 epitaxial Layers under Laser Irradiation

Year: 2000

Type: article

Source: Inorganic Materials

DOI: 10.1007/bf02757977

Authors: G. K. Safaraliev, Yu. N. Emirov, M. K. Kurbanov, T. I. Isabekova

Institution: Dagestan State University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2020296147

FWCI:

Cites:

Cited by:

Related to: 10