Work

Structure of GaN quantum dots grown under “modified Stranski–Krastanow” conditions on AlN

Year: 2003

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.1592866

Authors: N. Gogneau, D. Jalabert, E. Monroy, T. Shibata, M. Tanaka, B. Daudin

Institutions: Centre National de la Recherche Scientifique, Université Joseph Fourier, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, CEA Grenoble, NGK Insulators (Japan)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2020409122

FWCI: 10.03

Cites: 39

Cited by: 111

Related to: 10