Work

Robust Surface-Potential-Based Compact Model for GaN HEMT IC Design

Year: 2013

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2013.2265320

Authors: Sourabh Khandelwal, Chandan Yadav, Shantanu Agnihotri, Yogesh Singh Chauhan, Arnaud Curutchet, Thomas Zimmer, Jean-Claude De Jaeger, Nicolas Defrance, Tor A. Fjeldly

Institutions: Norwegian University of Science and Technology, Indian Institute of Technology Kanpur, Université de Bordeaux, Institut d'Electronique, de Microélectronique et de Nanotechnologie

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2020497754

FWCI: 3.982

Cites: 14

Cited by: 127

Related to: 10