Epitaxial growth of 3C-SiC on Si by low-pressure chemical vapor deposition
Year: 1986
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.97596
Authors: Y. Fujiwara, E. Sakuma, S. Misawa, K. Endo, S. Yoshida
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2020589345