Work

Preparation and characterization of SiO2/6H–SiC metal–insulator–semiconductor structure using TEOS as source material

Year: 2001

Type: article

Source: Applied Surface Science

DOI: 10.1016/s0169-4332(01)00515-3

Authors: K. Kamimura, D. Kobayashi, S. Okada, T. Mizuguchi, E. Ryu, R. Hayashibe, F. Nagaune, Y. Onuma

Institution: Shinshu University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2020658556

FWCI:

Cites: 7

Cited by: 12

Related to: 10