Work

Al- and N-polar AlN layers grown on c-plane sapphire substrates by modified flow-modulation MOCVD

Year: 2007

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/j.jcrysgro.2007.04.004

Authors: M. Takeuchi, H. Shimizu, R. Kajitani, K. Kawasaki, T. Kinoshita, K. Takada, H. Murakami, Y. Kumagai, A. Koukitu, T. Koyama, S.F. Chichibu, Y. Aoyagi

Institutions: Tokyo Institute of Technology, RIKEN, Tokuyama (Japan), Tokyo University of Agriculture and Technology, University of Tsukuba, Japan Science and Technology Agency

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Ministry of Education, Culture, Sports, Science and Technology, New Energy and Industrial Technology Development Organization

OpenAlex ID: W2024914013

FWCI: 2.519

Cites: 27

Cited by: 75

Related to: 10