Work

Magnetic properties of Ni doped gallium nitride with vacancy induced defect

Year: 2009

Type: article

Source: Journal of Magnetism and Magnetic Materials

DOI: 10.1016/j.jmmm.2009.09.028

Authors: S. Munawar Basha, S. Ramasubramanian, R. Thangavel, M. Rajagopalan, J. Kumar

Institutions: Anna University, Chennai, Research Center for Applied Science, Academia Sinica, Academia Sinica

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2025801034

FWCI: 1.224

Cites: 22

Cited by: 17

Related to: 10