Work

Sub-nanosecond semiconductor opening switches based on 4H–SiC p+pon+-diodes

Year: 2003

Type: article

Source: Solid-State Electronics

DOI: 10.1016/s0038-1101(03)00157-6

Authors: Igor V. Grekhov, Pavel A. Ivanov, Dmitry V. Khristyuk, Andrey O. Konstantinov, Sergey V. Korotkov, Tat’yana P. Samsonova

Institution: Ioffe Institute

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: International Science and Technology Center, European Office of Aerospace Research and Development

OpenAlex ID: W2027264992

FWCI: 1.655

Cites: 12

Cited by: 31

Related to: 10