Work

Effect of Crystal Orientation on Dielectric Properties of Lead Zirconium Titanate Thin Films Prepared by Reactive RF-Sputtering

Year: 2001

Type: article

Abstract: Theoretical calculations based on phenomenology of ferroelectrics have been previously reported for lead zirconium titanate (PZT) system. This paper offers an experimental comparison of the crystal orientation dependence of dielectric properties for PZT thin films grown using reactive RF-sputtering. Highly oriented PZT thin films with a rhombohedral composition have been grown in different orientations using selective rapid thermal annealing cycles. The PZT(100) oriented films showed larger dielectric constant and loss compared to PZT(111) films. The PZT(100) films possessed sharp square-like hysteresis loops indicating a instantaneous switching of domains at the coercive field whereas the PZT(111) films showed smooth hysteresis loops as expected from our phenomenological calculations.

Source: Japanese Journal of Applied Physics

DOI: 10.1143/jjap.40.713

Authors: Sriram Kalpat, X. Du, Issac R. Abothu, Akira Akiba, Hiroshi Goto, Kenji Uchino

Institutions: Pennsylvania State University, Institute of Materials Research and Engineering, Omron (Japan)

Language: English

Topic: Ferroelectric and Piezoelectric Materials

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: bronze

Funder: Office of Naval Research

OpenAlex ID: W2030182102

FWCI: 2.272

Cites: 7

Cited by: 42

Related to: 10