Reflection Electron Microscope Observations of Dislocations and Surface Structure Phase Transition on Clean (111) Silicon Surfaces
Year: 1980
Type: article
Abstract: A recently reported surface study by means of ultra-high-vacuum reflection electron microscopy (Osakabe et al. : Surf. Sci. in press) was extended to further details of clean (111) silicon surfaces. A screw dislocation emergent at the surface was clearly identified as the place at which one surface step terminates with a characteristic line contrast. In the transformation between the (7×7) and (1×1) surface structures across 830°C, the surface steps act as nucleation sites : on cooling the (7×7) structure nucleates at the upper edge of the steps and grows along the upper terraces, while on heating the reversed process takes place.
DOI: 10.1143/jjap.19.l309
Authors: Nobuyuki Osakabe, Katsumichi Yagi, Goro Honjo
Institution: Tokyo Institute of Technology
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2032045672