Work

On the drain current saturation in short channel MOSFETs

Year: 2005

Type: article

Source: Microelectronics Journal

DOI: 10.1016/j.mejo.2005.09.020

Authors: A. Benfdila, F. Balestra

Institutions: The Abdus Salam International Centre for Theoretical Physics (ICTP), Mouloud Mammeri University of Tizi-Ouzou

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2032070548

FWCI:

Cites: 23

Cited by: 15

Related to: 10