Work

Formation of device-oriented InGaAs coupled quantum structures by selective MBE growth on patterned InP substrates

Year: 2000

Type: article

Source: Physica E Low-dimensional Systems and Nanostructures

DOI: 10.1016/s1386-9477(00)00078-3

Authors: Hajime Fujikura, Tsutomu Muranaka, Hideki Hasegawa

Institutions: Hokkaido University, Research Center for Integrated Quantum Electronics, Hokkaido University

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Ministry of Education, Culture, Sports, Science and Technology

OpenAlex ID: W2033101607

FWCI: 3.564

Cites: 6

Cited by: 17

Related to: 10