Work

A wide bandgap silicon carbide (SiC) gate driver for high-temperature and high-voltage applications

Year: 2014

Type: conference-paper

Source: IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs

DOI: 10.1109/ispsd.2014.6856064

Authors: Ranjan R. Lamichhane, Nance Ericsson, Shane Frank, Chuck Britton, Laura Marlino, Alan Mantooth, Matt Francis, Paul Shepherd, Michael Glover, Sonia Perez, Ty McNutt, Bret Whitaker, Zach Cole

Institutions: Intel (United States), Oak Ridge National Laboratory, University of Arkansas at Fayetteville, Arkansas Power Electronics International

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDGs: Industry, innovation and infrastructure, Affordable and clean energy

Open Access status: closed

OpenAlex ID: W2033185403

FWCI: 7.226

Cites: 13

Cited by: 63

Related to: 10