Year: 2015
Type: article
Abstract: Macroporous silicon light trapping layers on the surface of p-type substrates were manufactured by using electrochemical etching. Optical measurements have shown the decreased optical reflection as compared to bulk silicon. The p-n junction was formed by phosphorus diffusion from phosphosilicate glasses. Scanning Kelvin Force Microscopy technique was used to determine the location of p-n junction in samples with porous silicon layers.DOI: http://dx.doi.org/10.5755/j01.ms.21.1.5725
Source: Materials Science
Institution: Center for Physical Sciences and Technology
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $539
OpenAlex ID: W2033775773