7.1 A 1/4-inch 8Mpixel CMOS image sensor with 3D backside-illuminated 1.12μm pixel with front-side deep-trench isolation and vertical transfer gate
Year: 2014
Type: conference-paper
Authors: JungChak Ahn, Kyungho Lee, Yitae Kim, Heegeun Jeong, Bumsuk Kim, Hongki Kim, Jongeun Park, Taesub Jung, Wonje Park, Taeheon Lee, Eunkyung Park, Sangjun Choi, Gyehun Choi, Haeyong Park, Yujung Choi, Seungwook Lee, Yunkyung Kim, Y. Jay Jung, Donghyuk Park, Seungjoo Nah, Youngsun Oh, Mihye Kim, Yooseung Lee, Youngwoo Chung, Ihara Hisanori, Joonhyuk Im, Daniel-K J Lee, Byunghyun Yim, GiDoo Lee, Heesang Kown, Sungho Choi, Jeonsook Lee, Dongyoung Jang, Youngchan Kim, Tae Chan Kim, Goto Hiroshige, Chi-Young Choi, Duckhyung Lee, GabSoo Han
Institution: Samsung Electronics (South Korea)
Language: English
Topic: CCD and CMOS Imaging Sensors
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2033901409