Work

Study on the Electrical Conduction Mechanism in Al2O3/Polyimide Langmuir-Blodgett Film Systems

Year: 1993

Type: article

Abstract: We fabricated Al/Al2O3/polyimide Langmuir-Blodgett films (PI LB)/Al (MIM) and Al/Al2O3/PI LB/Al/Al2O3/PI LB/Al (MIMIM) junctions by means of the LB technique, and then examined the electrical transport properties of the junctions from the tan δ values of these junctions. For MIM junctions, the tunneling conduction mechanism dominated in PI LB films when the number of deposited PI LB films was less than 4. In contrast, the bulk conduction mechanism dominated when the number of deposited PI LB films was greater than 5. For MIMIM junctions, the tan δ value of the junctions was about 10% of that of MIM-external wire-MIM junctions. It was concluded that middle Al/Al2O3 layers sandwiched between top Al and base Al electrodes control the number of electrons passing through MIMIM junctions.

Source: Japanese Journal of Applied Physics

DOI: 10.1143/jjap.32.4709

Authors: Masahito Kushida, Mitsumasa Iwamoto, Taro Hino

Institutions: Chiba University, Tokyo Institute of Technology, Kanagawa University

Language: English

Topic: Molecular Junctions and Nanostructures

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W2034324924

FWCI: 0.961

Cites: 6

Cited by: 8

Related to: 10