Work

Impact of the Stress on the Sub‐Micron N‐Metal Oxide Semiconductor Field Effect Transistor Characteristics

Year: 2001

Type: article

Abstract: In this paper, we present a drain current model for stressed short‐channel MOSFET′s. Stress conditions are chosen so that the interface states generated by hot‐carriers are dominant. The defects generated during stress time are simulated by a spatio‐temporal gaussian distribution. The parasitic source and drain resistances are included. We also investigate the impact of the interface charge density, generated during stress, on the transconductance. Simulation results show a significant degradation of the drain current versus stress time.

Source: Active and Passive Electronic Components

DOI: 10.1155/2001/18731

Authors: R. Marrakh, A. Bouhdada

Institution: University of Hassan II Casablanca

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $1,000

OpenAlex ID: W2034475783