Work

Fabrication of undoped semi-insulating InP by multiple-step wafer annealing

Year: 1998

Type: article

Source: Journal of Electronic Materials

DOI: 10.1007/s11664-998-0329-3

Authors: M. Uchida, K. Kainosho, M. Ohta, O. Oda

Institution: Japan Energy Inc. (Japan)

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2035538711

FWCI: 1.941

Cites: 7

Cited by: 14

Related to: 10