Work

Damage-free passivation of InAlAs/InGaAs HFETs by use of ECR-deposited SiN

Year: 1993

Type: article

Source: Electronics Letters

DOI: 10.1049/el:19930316

Authors: D.J. Newson, I.D. Henning, A.J. Murrell, R.C. Grimwood

Institutions: BT Research, Oxford Instruments (United Kingdom)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2036617954

FWCI: 1.922

Cites: 1

Cited by: 6

Related to: 10