Work

Analysis of Correlated Gate and Drain Random Telegraph Noise in Post-Soft Breakdown TiN/HfLaO/${\rm SiO}_{x}$ nMOSFETs

Year: 2014

Type: article

Abstract: We investigate correlated gate (IG) and drain (ID) random telegraph noise phenomena observed in post breakdown regime on nMOSFET TiN/HfLaO/ SiOxgate-stacks. We observe two different IG-IDcorrelation patterns (i.e., of the same and opposite polarities) that we attributed to charge trapping into oxygen vacancy traps of different kinds located in the SiOxclose to the Si/SiOxinterface. Results reported in this letter provide useful information for improving the understanding of IG/IDRTN phenomena and its impact on the reliability of post-SBD nanometer MOSFETs.

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2013.2295923

Authors: Wenhu Liu, Andrea Padovani, Luca Larcher, Nagarajan Raghavan, Kin Leong Pey

Institutions: Nanyang Technological University, University of Modena and Reggio Emilia, Singapore University of Technology and Design

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W2037508341

FWCI: 1.725

Cites: 14

Cited by: 19

Related to: 10