Intrinsic microcrystalline silicon by plasma-enhanced chemical vapor deposition from dichlorosilane
Year: 1998
Type: article
Abstract: Microcrystalline silicon (μc-Si:H) of truly intrinsic character can be deposited by plasma-enhanced chemical vapor deposition (PECVD) when dichlorosilane (SiH2Cl2) is added. A dark conductivity of 1.6×10−8 S/cm and an activation energy of 0.62 eV are obtained. No special gas purification or microdoping is required. SiH2Cl2 in small amounts has the additional effect of enhancing the crystallinity and reducing the oxygen incorporation by over a factor of 2. Sub-band-gap absorption spectroscopy indicates a low defect density.
Source: Applied Physics Letters
DOI: 10.1063/1.122138
Institution: Princeton University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2037526953