Work

Broadly tunable high-power InAs/GaAs quantum-dot external cavity diode lasers

Year: 2010

Type: article

Abstract: A record broadly tunable high-power external cavity InAs/GaAs quantum-dot diode laser with a tuning range of 202 nm (1122 nm-1324 nm) is demonstrated. A maximum output power of 480 mW and a side-mode suppression ratio greater than 45 dB are achieved in the central part of the tuning range. We exploit a number of strategies for enhancing the tuning range of external cavity quantum-dot lasers. Different waveguide designs, laser configurations and operation conditions (pump current and temperature) are investigated for optimization of output power and tunability.

Source: Optics Express

DOI: 10.1364/oe.18.019438

Authors: Ksenia A. Fedorova, Maria Ana Cataluna, Igor Krestnikov, Daniil Livshits, Edik U. Rafailov

Institutions: University of Dundee, Innolume (Germany)

Language: English

Topic: Semiconductor Lasers and Optical Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $2,270

Funders: Royal Academy of Engineering, European Commission, Engineering and Physical Sciences Research Council