Work

Raman Imaging Characterization of Structural and Electrical Properties in 4H SiC

Year: 2004

Type: article

Source: Materials science forum

DOI: 10.4028/www.scientific.net/msf.457-460.609

Authors: Michel Mermoux, Alexandre Crisci, Francis Baillet

Institutions: Institut polytechnique de Grenoble, Centre National de la Recherche Scientifique, Université Joseph Fourier

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2037726196

FWCI: 1.953

Cites: 6

Cited by: 8

Related to: 10