Work

Rapid annealing and charge injection in Al2O3 MIS capacitors

Year: 1974

Type: article

Source: IEEE Transactions on Nuclear Science

DOI: 10.1109/tns.1974.6498905

Authors: F. B. McLean, H. E. Boesch, J. M. McGarrity, R. B. Oswald

Institution: Harry Diamond Laboratories

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2040465196

FWCI: 4.508

Cites:

Cited by: 31

Related to: 10