Work

Temperature dependence of the absorption coefficient in doped quantum wells

Year: 1999

Type: article

Abstract: In this work we present a calculation of the infrared optical absorption coefficient for a Ga1-xAl xAs quantum well (QW) as a function of donor impurity concentration, compensation and temperature. We treat this problem using a Self-Consistent Method (SC) calculation taking into account donors as major impurities. The Variational Method was used to obtain the ground state wave-function of an electron bound to a donor impurity in a QW. The results show a shift of energy in the absorption coefficient.

Source: Brazilian Journal of Physics

DOI: 10.1590/s0103-97331999000400021

Authors: M.R. Baldan, R.M. Serra, P.D. Emmel, A. Ferreira da Silva

Institutions: Instituto Nacional de Pesquisas Espaciais, Universidade São Francisco, Universidade Federal de São Carlos

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $3,290

OpenAlex ID: W2040705258

FWCI: 0.224

Cites:

Cited by: 1

Related to: 10