An n+-n-p germanium avalanche photodiode
Year: 1980
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.91550
Authors: T. Kaneda, S. Kagawa, T. Mikawa, Y. Toyama, H. Ando
Institutions: Fujitsu (Japan), NTT (Japan)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2040929014
