Work

Noise Performance of Heterojunction DDR MITATT Devices Based on at W-Band

Year: 2013

Type: article

Abstract: Noise performance of different structures of anisotype heterojunction double-drift region (DDR) mixed tunneling and avalanche transit time (MITATT) devices has been studied. The devices are designed for operation at millimeter-wave W-band frequencies. A simulation model has been developed to study the noise spectral density and noise measure of the device. Two different mole fractions and of Ge and corresponding four types of device structure are considered for the simulation. The results show that the -Si heterojunction DDR structure of MITATT device excels all other structures as regards noise spectral density ( sec) and noise measure (33.09 dB) as well as millimeter-wave properties such as DC-to-RF conversion efficiency (20.15%) and CW power output (773.29 mW).

Source: Active and Passive Electronic Components

DOI: 10.1155/2013/720191

Authors: Suranjana Banerjee, Aritra Acharyya, J. P. Banerjee

Institutions: Maulana Abul Kalam Azad University of Technology, West Bengal, University of Calcutta

Language: English

Topic: Radio Frequency Integrated Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $1,000

OpenAlex ID: W2042014643