Work

Thermally assisted hole tunneling at the A u − S i 3 N 4 interface and the energy-band diagram of metal-nitride-oxide-semiconductor structures

Year: 1998

Type: article

Source: Physical review. B, Condensed matter

DOI: 10.1103/physrevb.57.r2081

Authors: V. A. Gritsenko, E. E. Meerson, Yu. N. Morokov

Institutions: Siberian Branch of the Russian Academy of Sciences, Institute of Semiconductor Physics, Federal Research Center for Information and Computational Technologies

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2042380164

FWCI: 2.365

Cites: 20

Cited by: 91

Related to: 10