Work

Electrical transport characteristics of Au/n-GaN Schottky diodes

Year: 2005

Type: article

Source: Materials Science and Engineering C

DOI: 10.1016/j.msec.2005.10.016

Authors: Z. Benamara, B. Akkal, A. Talbi, B. Gruzza

Institutions: Université Djilali de Sidi Bel Abbès, Université Blaise Pascal

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2042534436

FWCI: 0.901

Cites: 14

Cited by: 18

Related to: 10