Characterization of Ca1−xErxF2+x solid solution thin films grown on Si(100) substrates
Year: 1993
Type: article
Abstract: Erbium-substituted Ca1−xErxF2+x calcium trifluoride layers were grown on Si(100) substrates by sublimation under ultrahigh vacuum of high purity solid solution powders. X-ray diffraction and scanning electron microscopy techniques were performed to study the texture and the structure of the layers. Their composition was mainly deduced from Rutherford backscattering of α particles and particle induced x-ray emission. For an erbium substitution rate, x, lower than 0.2, it has been shown that the film compositions are analogous with that of the sintered material and quite homogeneous. A Rutherford backscattering study in channeling conditions showed that heteroepitaxial Ca1−xErxF2+x/Si(100) structures can be grown for a substrate temperature of 550 °C.
Source: Journal of Applied Physics
DOI: 10.1063/1.353284
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2042855867