Work

MBE growth of high-quality GaAs

Year: 1989

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/0022-0248(89)90223-6

Author: Naresh Chand

Institution: AT&T (United States)

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2043096413

FWCI: 2.84

Cites: 44

Cited by: 32

Related to: 10