Work

Low-temperature (350 °C) growth of AlGaAs/GaAs laser diode by migration enhanced epitaxy

Year: 1988

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.341211

Authors: M. Asai, F. Sato, H. Imamoto, K. Imanaka, M. Shimura

Institution: Omron (Japan)

Language: English

Topic: Semiconductor Lasers and Optical Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2043730169

FWCI: 3.319

Cites: 5

Cited by: 17

Related to: 10