Work

Phosphorus and nitrogen doping into polycrystalline SiC films prepared by plasma-enhanced chemical vapor deposition at 700 °C

Year: 1992

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.351748

Authors: S. Hasegawa, N. Furuta, T. Takeshita, T. Inokuma, Y. Kurata

Institution: Kanazawa University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Japan Society for the Promotion of Science

OpenAlex ID: W2043900255

FWCI: 0.464

Cites: 13

Cited by: 10

Related to: 10