Work

Sub-GeV Electron and Positron Channeling in Straight, Bent and Periodically Bent Silicon Crystals

Year: 2013

Type: conference-paper

Abstract: Preliminary results of numerical simulations of electron and positron channeling and emission spectra are reported for straight, uniformly bent and periodically bent silicon crystal. The projectile trajectories are computed using the newly developed module [1] of the MBN Explorer package [2,3]. The electron and positron channeling along Si(110) and Si(111) crystallographic planes are studied for the projectile energies 195-855 MeV.

Source: Journal of Physics Conference Series

DOI: 10.1088/1742-6596/438/1/012018

Authors: G B Sushko, A V Korol, Walter Greiner, A V Solov'yov

Institutions: Frankfurt Institute for Advanced Studies, Ioffe Institute

Language: English

Topic: Crystallography and Radiation Phenomena

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: diamond

Funder: European Commission

Award: Crystalline Undulator: Theory and Experiment