A new double-heterostructure optoelectronic switching device using molecular-beam epitaxy
Year: 1986
Type: article
Source: Journal of Applied Physics
DOI: 10.1063/1.336618
Authors: G. W. Taylor, J. G. Simmons, A. Y. Cho, R. S. Mand
Institution: AT&T (United States)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2043911554