Year: 1993
Type: article
Abstract: P- and n-type Pb1-x Eu x Te (0≤x≤0.25) single-crystal films were prepared on BaF2 (111) substrates using the hot-wall epitaxy technique. The lattice constant increases nonlinearly with the composition ratio x, and the energy gap increases rapidly up to x=0.07, while its rate of increase decelerates for x>0.07. X-ray photoelectron spectroscopy measurements revealed that the localized Eu 4f level centers around 1.2-1.5 eV below the valence band maximum. It is seen from the transport measurements that all of the n-type films are metallic but for the p-type films a metal-to-insulator transition takes place at x=0.07. Using these results, the electronic structure of Pb1-x Eu x Te is proposed in which the Eu 4f localized electron plays an important role in the electronic properties for intermediate composition ratio (x>0.07).
DOI: 10.1143/jjap.32.4449
Institutions: Waseda University, Osaka Electro-Communication University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2043982117