Work

Integrated hybrid silicon triplexer

Year: 2010

Type: article

Abstract: We demonstrate an integrated triplexer on silicon with a compact size of 1mm by 3.5mm by utilizing a selective area wafer bonding technique. The wavelength demultiplexer on the triplexer chip successfully separates signals at wavelengths of 1310 nm, 1490 nm and 1550 nm with more than 10 dB extinction ratio. The measured 3 dB bandwidth of the integrated laser and photodetectors are 2 GHz and 16 GHz, respectively. Open eye diagrams are also measured for the integrated photodetector up to 12.5 GHz PRBS inputs.

Source: Optics Express

DOI: 10.1364/oe.18.023891

Authors: Hsu-Hao Chang, Ying-hao Kuo, Richard Jones, Assia Barkai, John E. Bowers

Institutions: University of California, Santa Barbara, Intel (United States)

Language: English

Topic: Photonic and Optical Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $2,270

Funder: University of California, Santa Barbara