Work

Characterization of deep levels in a-plane GaN epi-layers grown using various growth techniques

Year: 2011

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/j.jcrysgro.2011.11.042

Authors: Hooyoung Song, Eun Kyu Kim, Kwang Hyeon Baik, Sung-Min Hwang, Yong Woon Jang, Jeong Yong Lee

Institutions: Korea Electronics Technology Institute, Hanyang University, Korea Advanced Institute of Science and Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2045280552

FWCI: 0.359

Cites: 17

Cited by: 5

Related to: 10