Work

Analytical threshold voltage model for lightly doped short-channel tri-gate MOSFETs

Year: 2010

Type: article

Source: Solid-State Electronics

DOI: 10.1016/j.sse.2010.10.022

Authors: A. Tsormpatzoglou, D.H. Tassis, C.A. Dimitriadis, G. Ghibaudo, N. Collaert, G. Pananakakis

Institutions: Aristotle University of Thessaloniki, Micro and Nanotechnology Innovation Centre, IMEC

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Ministry of Education, Lifelong Learning and Religious Affairs, Aristotle University of Thessaloniki

OpenAlex ID: W2047697489

FWCI: 0.503

Cites: 21

Cited by: 25

Related to: 10