Suppression of reverse recovery surge voltage of silicon power diode by adjusting trap energy levels through local lifetime control
Year: 2014
Type: article
Abstract: To suppress the reverse recovery surge voltage of silicon power diodes, the effects of adjusting trap energy levels through local lifetime control were investigated by device simulation and theoretical analysis of the Shockley–Read–Hall (SRH) model. In general, local lifetime control techniques localize carrier traps at the anode side of a diode and optimize the carrier lifetime profile to suppress surge voltage. However, the suppression effect of a certain localized trap density distribution on surge voltage varies with a change in trap energy level, even if the trap density distribution is the same. It became clear that deep trap energy levels suppress surge voltage more than shallow trap energy levels at 1000 A/cm2 or less. Thus, deep trap energy levels such as E t − E i = 0.0–0.2 eV are favorable for suppressing surge voltage in almost all power devices.
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2048005015