Work

Electrical properties and luminescence spectra of light-emitting diodes based on InGaN/GaN heterostructures with modulation-doped quantum wells

Year: 2003

Type: article

Source: Semiconductors

DOI: 10.1134/1.1610129

Authors: S. S. Mamakin, A. É. Yunovich, A. B. Wattana, F. I. Manyakhin

Institutions: Lomonosov Moscow State University, National University of Science and Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2048895121

FWCI: 0.629

Cites: 10

Cited by: 12

Related to: 10