Work

Thermal instability of silicon-on-insulator thin films measured by low-energy electron microscopy

Year: 2010

Type: conference-paper

Abstract: Using low-energy electron microscopy (LEEM), we investigate the ultrahigh vacuum annealing of silicon-on-insulator (SOI) samples capped by a chemically-prepared oxide layer. Consistent with previous reports: (1) for T > 750°C, the capping-oxide decomposes by void nucleation and growth, then (2) for T > 850°C, the Si thin-film dewets from the SiO 2 substrate. Here, we show that the morphological evolution of the surface during the dewetting process is dependent on the preparation of the SOI surface. Two dewetting pathways are evident in recent literature, we find that one evolution is characteristic of clean Si(100)−2 × 1 surfaces, while the other is correlated with surface contamination.

Source: IOP Conference Series Materials Science and Engineering

DOI: 10.1088/1757-899x/12/1/012016

Authors: E Bussmann, F Cheynis, F Leroy, P Müller

Institutions: Centre National de la Recherche Scientifique, Aix-Marseille Université, Centre Interdisciplinaire de Nanoscience de Marseille, L'Oréal (France), Université de Lille, Institut d'Electronique, de Microélectronique et de Nanotechnologie

Language: English

Topic: Fluid Dynamics and Thin Films

Subfield: Computational Mechanics

Field: Engineering

Domain: Physical Sciences

Open Access status: bronze

Funder: Agence Nationale de la Recherche

OpenAlex ID: W2048969490

FWCI: 6.529

Cites: 14

Cited by: 19

Related to: 10