Work

Modelling of Staebler-Wronski Effect in Hydrogenated Amorphous Silicon under Moderate and Intense Illumination

Year: 2004

Type: article

Abstract: A new model is developed for the Staebler-Wronski effect (SWE) in intrinsic a-Si:H. In this model, non-radiative recombination of the photogenerated carriers occurs at a weak bond close to a SiHHSi configuration, which allows a local creation of defect of the SiHD type. This defect can be annihilated by mobile hydrogen atom that has been emitted from an other distant SiHD defect as a result of non-radiative recombination at this defect site. In this study we have considered illumination intensities in the moderate and intense illumination range. In both cases, the proposed model reproduces many experimental features of the SWE known in the literature.

Source: Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum

DOI: 10.4028/www.scientific.net/ddf.230-232.221

Authors: A.F. Meftah, A.M. Meftah, A. Merazga

Institution: University of Biskra

Language: English

Topic: Silicon and Solar Cell Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

OpenAlex ID: W2049581069

FWCI:

Cites: 17

Cited by: 3

Related to: 10