Enhanced performance of GaN based light-emitting diodes with a low temperature p-GaN hole injection layer
Year: 2013
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.4773558
Authors: Hongjian Li, Junjie Kang, Panpan Li, Jun Ma, Hui Wang, Meng Liang, Zhicong Li, Jing Li, Xiaoyan Yi, Guohong Wang
Institutions: Chinese Academy of Sciences, Institute of Semiconductors
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2050102802